마그네트론 스파터시 금속 극박막의 실시간 전기저항과 미세구조 변화

서지정보

ㆍ발행기관 : 한국재료학회 ㆍ수록지정보 : 한국재료학회지 / 21권 / 3호
ㆍ저자명 : 권나현, 김회봉, 황빈, 배동수, 조영래

영어 초록

Ultra-thin aluminum (Al) and tin (Sn) films were grown by dc magnetron sputtering on a glass substrate. The electrical resistance R of films was measured in-situ method during the film growth. Also transmission electron microscopy (TEM) study was carried out to observe the microstructure of the films. In the ultra-thin film study, an exact determination of a coalescence thickness and a continuous film thickness is very important. Therefore, we tried to measure the minimum thickness for continuous film (dmin) by means of a graphical method using a number of different y-values as a function of film thickness. The raw date obtained in this study provides a graph of in-situ resistance of metal film as a function of film thickness. For the Al film, there occurs a maximum value in a graph of in-situ electrical resistance versus film thickness. Using the results in this study, we could define clearly the minimum thickness for continuous film where the position of minimum values in the graph when we put the value of Rd3 to y-axis and the film thickness to x-axis. The measured values for the minimum thickness for continuous film are 21 nm and 16 nm for sputtered Al and Sn films, respectively. The new method for defining the minimum thickness for continuous film in this study can be utilized in a basic data when we design an ultra-thin film for the metallization application in nano-scale devices.

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